AP1608P1C 반도체 회로 부품 판매점
PHOTOTRANSISTOR
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 Kingbright Corporation |
1.6X0.8mm PHOTOTRANSISTOR
AP1608P1C
Features
1.6mmX0.8mm SMT LED, 1.1mm THICKNESS.
MECHANICALLY AND SPECTRALLY MATCHED TO
THE AP1608 SERIES INFRARED EMITTING LED LAMP.
WATER CLEAR LENS.
PACKAGE: 2000PCS / REEL .
RoHS COMPLIANT.
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
www.DataSheet4U.com
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3.Specifications are subject to change without notice.
SPEC NO: DSAD1363
APPROVED: J. Lu
REV NO: V.4
CHECKED: Allen Liu
DATE: AUG/13/2005
DRAWN: W.J.ZHU
PAGE: 1 OF 4
ERP: 1203000037
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Min.
VBR CEO Collector-to-Emitter Breakdown Voltage
30
VBR ECO Emitter-to-Collector Breakdown Voltage
5
VCE (SAT) Collector-to-Emitter Saturation Voltage
I CEO Collector Dark Current
-
-
TR Rise Time (10％ to 90％ )
-
TF Fall Time (90％ to 10％ )
-
I (ON) On State Collector Current
0.1
2θ1/2 Viewing Angle
-
Typ.
-
-
-
-
3
3
0.3
120
Max.
-
-
0.8
100
-
-
-
-
Units
V
V
V
nA
us
us
mA
deg
Test Conditions
IC=100uA
Ee=0mW/cm2
IE=100uA
Ee=0mW/cm2
IC=2mA
Ee=20mW/cm2
VCE=10V
Ee=0mW/cm2
VCE = 5V
IC=1mA
RL=1000Ω
VCE = 5V,
Ee=1mW/cm2,
λ=940nm
-
Absolute Maximum Ratings at TA=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Max.Ratings
30V
5V
100mW
-40°C ~ +85°C
-40°C ~ +85°C
SPEC NO: DSAD1363
APPROVED: J. Lu
REV NO: V.4
CHECKED: Allen Liu
DATE: AUG/13/2005
DRAWN: W.J.ZHU
PAGE: 2 OF 4
ERP: 1203000037
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Kingbright Corporation
( kingbright )
AP1608P1C transistor
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[ AP1608P1C.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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