MSC2295-CT1 반도체 회로 부품 판매점
(MSC2295-BT1/-CT1) NPN RF Amplifier Transistors Surface Mount
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 ETL |
NPN RF Amplifier Transistors
Surface Mount
COLLECTOR
3
MSC2295-BT1
MSC2295-CT1
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
30
20
5.0
30
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
T stg
www.DataShMeeat4xU.com
200
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Base Cutoff Current
(V CB = 10 Vdc, I E = 0)
DC Current Gain (1)
(V CB = 10 Vdc, I C = –1.0 mAdc)
MSC2295-BT1
MSC2295-CT1
Collector-Gain - Bandwidth Product
(V CB = 10 Vdc, I E = –1.0 mAdc)
Reverse Transistor Capacitance
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz)
1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%.
DEVICE MARKING
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
Symbol
I CBO
h FE
fT
C re
1
2
CASE 318D–03, STYLE1
SC–59
Min
Max
Unit
— 0.1 µAdc
—
70 140
110 220
150 — MHz
— 1.5 pF
VBX
Marking Symbol
VCX
MSC2295-BT1
MSC2295-CT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N4–1/1
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MSC2295-CT1 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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