MPS3563 반도체 회로 부품 판매점
(MPS3563 / MPS918) Amplifier Transistors NPN Silicon
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 ON Semiconductor |
www.DataSheet4U.com
MPS918, MPS3563
MPS918 is a Preferred Device
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Symbol
MPS918
MPS3563
VCEO
Value
15
12
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MPS918
30
MPS3563
30
Emitter −Base Voltage
VEBO
Vdc
MPS918
3.0
MPS3563
2.0
Collector Current − Continuous
IC 50 mAdc
Total Device Dissipation @ TA = 25°C PD 350 mW
Derate above 25°C
2.8 mW/°C
Total Device Dissipation @ TC = 25°C PD 0.85 W
Derate above 25°C
6.8 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Note 1)
Symbol
RqJA
Max
357
Unit
°C/W
Thermal Resistance, Junction−to−Case
RqJC
147 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. RqJA is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
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BASE
COLLECTOR
3
1
EMITTER
MARKING
DIAGRAM
MPS
xxxx
TO−92
CASE 29−11
AYWW G
G
1
2
STYLE 1
3
MPSxxxx = Device Code
xxxx = 918 or 3563
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MPS918
MPS918G
MPS3563
MPS3563G
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
5000 Units/Box
5000 Units/Box
5000 Units/Box
5000 Units/Box
MPS3563RLRA
TO−92 2000/Tape & Reel
MPS3563RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS918/D
MPS918, MPS3563
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 3.0 mAdc, IB = 0)
MPS918
MPS3563
Collector −Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
MPS918
MPS3563
MPS918
MPS3563
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
MPS918
MPS3563
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
(IC = 8.0 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
MPS918
MPS3563
MPS918
MPS918
Current −Gain − Bandwidth Product (Note 2)
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 kW, f = 60 MHz)
FUNCTIONAL TEST
MPS918
MPS3563
MPS918
MPS918
MPS3563
MPS918
MPS3563
MPS918
Common−Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz)
(Gfd + Gre t −20 dB)
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
Oscillator Collector Efficiency
(IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz)
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 1.0%.
MPS918
MPS3563
MPS918
MPS918
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hfe
NF
Gpe
Pout
η
Min Max
15 −
12 −
30 −
30 −
3.0 −
2.0 −
− 10
− 50
20 −
20 200
− 0.4
− 1.0
600 −
600 1500
− 3.0
− 1.7
− 1.7
− 2.0
20 250
− 6.0
15 −
14 −
30 −
25 −
Unit
Vdc
Vdc
Vdc
nAdc
−
Vdc
Vdc
MHz
pF
pF
−
dB
dB
mW
%
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MPS3563 transistor
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국내 전력반도체 판매점
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