IRC4BC40F 반도체 회로 부품 판매점
INSULATED GATE BIPOLAR TRANSISTOR
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 International Rectifier |
www.DataSheet4U.com
PD - 91454B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40F
Fast Speed IGBT
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 27A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
49
27
200
200
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
0.77
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000
IRG4BC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.70 — V/°C VGE = 0V, IC = 1.0mA
— 1.50 1.7
IC = 27A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 1.85 — V IC = 49A
See Fig.2, 5
— 1.56 —
IC = 27A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
9.2 12 — S VCE = 100V, IC = 27A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 100 150
IC = 27A
— 15 23
— 35 53
nC VCC = 400V
VGE = 15V
See Fig. 8
— 26 —
— 18 — ns TJ = 25°C
— 240 360
IC = 27A, VCC = 480V
— 170 250
VGE = 15V, RG = 10Ω
— 0.37 —
Energy losses include "tail"
— 1.81 — mJ See Fig. 10, 11, 13, 14
— 2.18 2.8
— 25 —
TJ = 150°C,
— 21 —
— 380 —
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 10Ω
— 310 —
Energy losses include "tail"
— 3.9 — mJ See Fig. 13, 14
— 7.5 — nH Measured 5mm from package
— 2200 —
VGE = 0V
— 140 —
— 29 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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( ir )
IRC4BC40F transistor
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