PBSS4160V 반도체 회로 부품 판매점
NPN low VCEsat (BISS) transistor
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 NXP Semiconductors |
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PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 31 January 2005
Product data sheet
1. Product profile
1.1 General description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency, reduces heat generation
s Reduces printed-circuit board area required
s Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
s Major application segments:
x Automotive
x Telecom infrastructure
x Industrial
s Power management:
x DC-to-DC conversion
x Supply line switching
s Peripheral driver
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
t = 1 ms or limited by Tj(max)
IC = 1 A; IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1A
- 2A
200 250 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
Simplified outline Symbol
65 4
123
SOT666
1, 2, 5, 6
3
4
sym014
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
PBSS4160V -
plastic surface mounted package; 6 leads
4. Marking
Table 4: Marking codes
Type number
PBSS4160V
Marking code
41
Version
SOT666
9397 750 14359
Product data sheet
Rev. 02 — 31 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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PBSS4160V transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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