DTA114YM3T5G 반도체 회로 부품 판매점
Digital Transistors (BRT) PNP Silicon Surface Mount Transistors
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DTA114EM3T5G Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT−723 Package can be Soldered using Wave or Reflow.
• Available in 4 mm, 8000 Unit Tape & Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
VCBO
VCEO
IC
50
50
100
Unit
Vdc
Vdc
mAdc
http://onsemi.com
PNP SILICON
DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
1
2
SOT−723
CASE 631AA
Style 1
MARKING
DIAGRAM
XX M
xx = Specific Device Code
(See Marking Table on page 2)
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 0
1
Publication Order Number:
DTA114EM3/D
DTA114EM3T5G Series
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping†
DTA114EM3T5G
DTA124EM3T5G*
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G*
DTA123EM3T5G*
DTA143EM3T5G*
DTA143ZM3T5G*
DTA124XM3T5G
DTA123JM3T5G*
DTA115EM3T5G
DTA144WM3T5G*
6A 10
6B 22
6C 47
6D 10
6E 10
6F 4.7
6H 2.2
6J 4.7
6K 4.7
6L 22
6M 2.2
6N 100
6P 47
10
22
47
47
∞
∞
2.2
4.7
SOT−723
(Pb−Free)
8000/Tape & Reel
47
47
47
100
22
*Available upon request
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
FR−4 Board (Note 2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
260
2.0
480
600
4.8
205
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
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