KTC4075V 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR
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 KEC |
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
ᴌHigh hFE : hFE=70~700.
ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
ᴌComplementary to KTA2014V.
ᴌVery Small Package.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
60
50
5
150
30
100
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
KTC4075V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2 DIM MILLIMETERS
A 1.2 +_0.05
B 0.8 +_0.05
1 3 C 0.5 +_ 0.05
D 0.3 +_ 0.05
E 1.2 +_ 0.05
G 0.8 +_ 0.05
PP
H 0.40
J 0.12+_ 0.05
K 0.2 +_ 0.05
P5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
L
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=60V, IE=0
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
DC Current Gain
hFE (Note) VCE=6V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA
Transition Frequency
fT VCE=10V, IC=1mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Noise Figure
NF VCE=6V, IC=0.1mA,
f=1kHz, Rg=10kή
Note : hFE Classification O(2):70ᴕ140, Y(4):120ᴕ240, GR(6):200ᴕ400, BL(8):350~700
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
MAX.
0.1
0.1
700
0.25
-
3.5
UNIT
ỌA
ỌA
V
MHz
pF
1.0 10 dB
2001. 12. 5
Revision No : 1
1/3
KTC4075V
240
200
160
120
80
40
0
0
I C - V CE
6.0 5.0
3.0
COMMON EMITTER
Ta=25 C
2.0
1.0
0.5
I B =0.2mA
0
12345 6
COLLECTOR-EMITTER VOLTAGE VCE (V)
7
h FE - I C
1k
COMMON EMITTER
500
300
Ta=100 C
Ta=25 C
100 Ta=-25 C
VCE =6V
50
30
VCE =1V
10
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT I C (mA)
300
VCE(sat) - I C
1
COMMON EMITTER
0.5 I C /I B =10
0.3
0.1 Ta=100 C
0.05
0.03
Ta=25 C
Ta=-25 C
0.01
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT I C (mA)
300
fT - IC
3k COMMON EMITTER
V CE =10V
1k Ta=25 C
500
300
100
50
30
10
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT I C (mA)
300
2001. 12. 5
Revision No : 1
VBE(sat) - I C
10
COMMON EMITTER
5 I C /I B =10
Ta=25 C
3
1
0.5
0.3
0.1
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT I C (mA)
300
I B - V BE
3k
COMMON
1k EMITTER
VCE =6V
300
100
30
10
3
1
0.3
0
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE V BE (V)
1.2
2/3
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KTC4075V transistor
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