AOL1418 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 Alpha & Omega Semiconductors |
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AOL1418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1418 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOL1418 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1418L is a Green
Product ordering option. AOL1418 and AOL1418L
are electrically identical.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
Fits SOIC8
footprint !
S
G
D Bottom tab
connected to
drain
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B
TC=25°C G
TC=100°C
VGS
ID
Pulsed Drain Current
IDM
Continuous Drain
Current G
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
70
200
15
12
30
135
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19.5
48
1
Max
25
60
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOL1418
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250μA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
100
0.005
2.2
5
6.7
8.3
60
0.72
1
5
100
3
6.5
8.1
10.5
1
85
V
μA
nA
V
A
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1320
533
154
0.95
1600
1.5
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26 32 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=20A
13.3
3.2
16.2
nC
nC
Qgd Gate Drain Charge
6.6 nC
tD(on)
Turn-On DelayTime
7.2 10 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
12.5
22
18
33
ns
ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/μs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs
6
29.7
29
9
36
36
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
Rev1: Dec 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1418 transistor
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