IRH7450SE 반도체 회로 부품 판매점
TRANSISTOR N-CHANNEL
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Provisional Data Sheet No. PD 9.1390
REPETITIVE AVALANCHE AND dv/dt RATED
IRH7450SE
HEXFET® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the (SEE) pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRH7450SE
500V
RDS(on)
0.51Ω
ID
11A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRH7450SE
Units
Continuous Drain Current
Continuous Drain Current
11
7.0 A
Pulsed Drain Current
44
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/K
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy
500 mJ
Avalanche Current
11 A
Repetitive Avalanche Energy
15 mJ
Peak Diode Recovery dv/dt
3.5 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.0063 in. (1.6mm) from case for 10 sec.)
Weight
11.5 (typical)
g
To Order
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IRH7450SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
500
—
—
—
2.5
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—— V
0.6 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.51
— 0.57
— 4.5
——
— 50
— 250
— 100
— -100
— 180
— 45
— 105
— 45
— 190
— 190
— 130
8.7 —
8.7 —
4000
330
52
—
—
—
Ω
V
S( )
µA
nA
nC
VGS = 12V, ID =7.0A
VGS = 12V, ID = 11A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 7.0A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11A
VDS = Max. Rating x 0.5
VDD = 250V, ID =11A,
ns RG = 2.35Ω
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
Min. Typ. Max. Units
Test Conditions
——
——
11
44
A Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
— — 1.6 V
— — 1100 ns
— — 16 µC
Tj = 25°C, IS = 11A, VGS = 0V
Tj = 25°C, IF =11 A, di/dt ≤ 100A/µs
VDD ≤ 50V
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.83
— — 30 K/W
— 0.12 —
Test Conditions
Typical Socket Mount
To Order
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