MRF6S21050LR3 반도체 회로 부품 판매점
RF Power Field Effect Transistors
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 Freescale Semiconductor |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,
Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6S21050L
Rev. 0, 3/2005
MRF6S21050LR3
MRF6S21050LSR3
2170 MHz, 11.5 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF6S21050LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF6S21050LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
VDSS
VGS
PD
Tstg
TJ
CW
Value
- 0.5, +68
- 0.5, +12
151
0.86
- 65 to +150
200
50
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
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MRF6S21050LR3 MRF6S21050LSR3
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Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
RθJC
1.16
1.28
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 µAdc
IDSS
—
—
1 µAdc
IGSS
—
—
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 450 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1.1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
VGS(Q)
VDS(on)
gfs
1
2
—
—
Crss
—
23
2.9 4
0.21 0.3
5.3 —
0.75 —
Vdc
Vdc
Vdc
S
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps 15 16 18 dB
Drain Efficiency
ηD 26 27.7 — %
Intermodulation Distortion
IM3 — - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
—
- 40 - 38 dBc
Input Return Loss
IRL — - 15 - 9 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3
2
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RF Device Data
Freescale Semiconductor
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