IRHF93130 반도체 회로 부품 판매점
TRANSISTOR P-CHANNEL
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 International Rectifier |
www.DataSheet4U.com
PD - 90882F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF9130
JANSR2N7389
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF9130 100K Rads (Si)
IRHF93130 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID QPL Part Number
-6.5A JANSR2N7389
-6.5A JANSF2N7389
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-6.5
-4.1 A
-26
25 W
0.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
±20
165
-6.5
2.5
-22
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
0.98 (typical)
g
For footnotes refer to the last page
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1
2/18/03
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IRHF9130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
Zero Gate Voltage Drain Current
-100
—
—
—
-2.0
2.5
—
—
——
-0.112 —
— 0.30
— 0.35
— -4.0
——
— -25
— -250
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
— — -100
— — 100
— — 45
— — 10
— — 25
— — 30
— — 50
— — 70
— — 70
— 7.0 —
V VGS = 0V, ID =-1.0mA
V/°C Reference to 25°C, ID = -1.0mA
Ω
V
S( )
µA
nA
nC
VGS = -12V, ID = -4.1A➃
VGS = -12V, ID = -6.5A➃
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -4.1A ➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -6.5A
VDS = -50V
VDD = -50V, ID = -6.5A,
ns VGS =-12V, RG = 7.5Ω
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1200 —
— 290 —
— 76 —
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — -6.5
— — -26
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — -3.0 V
Tj = 25°C, IS = -6.5A, VGS = 0V ➃
— — 250 nS Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
— — 0.74 µC
VDD ≤ -50V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 5.0 °C/W
— — 175
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRHF93130 transistor
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