MRF1150MB 반도체 회로 부품 판매점
MICROWAVE POWER TRANSISTOR NPN SILICON
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 Tyco Electronics |
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
Order this document
by MRF1150MB/D
MRF1150MB
150 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°C
VCBO
70 Vdc
VEBO
4.0 Vdc
IC 12 Adc
PD DataShe58e3t4U.comWatts
3.33 W/°C
Storage Temperature Range
Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
RθJC
CASE 332A–03, STYLE 1
DataShee
Max Unit
0.3 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
70
—
— Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
70
—
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE 10 30 — —
NOTES:
(continued)
1. Pulse Width = 10 µs, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 µs Pulse on Tektronix 576 or equivalent.
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REV 0
1
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)
Load Mismatch
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
Cob
GPB
η
ψ
— 25 32 pF
7.8 9.8 — dB
35 40 — %
No Degradation in Power Output
+
C2 C3 C4
+
- VCC = 50 Vdc
L1 L2
et4U.com
RF
INPUT
DUT
RF
C2 OUTPUT
Z1 Z2 Z3 Z4 Z5
Z6 Z7 Z8 Z9
Z10
DataSheet4U.com
DataShee
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1 µF/100 V
C4 — 47 µF/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z10 — Distributed Microstrip Elements — See Photomaster
Board Material — 0.031″ Thick Teflon–Fiberglass, εr = 2.5
Figure 1. 1090 MHz Test Circuit
200
f = 960 MHz
150
1090 MHz
100
50
00
DataSheet4U.com
1215 MHz
VCC = 50 V
tp = 10 µs
D = 1%
5 10 15 20
Pin, INPUT POWER (WATTS pk)
Figure 2. Output Power versus Input Power
25
REV 0
2
DataSheet4 U .com
200
Pin = 20 W pk
17.5 W pk
150
100
15 W pk
50 VCC = 50 V
tp = 10 µs
D = 1%
0
960
1090
f, FREQUENCY (MHz)
12.5 W pk
10 W pk
1215
Figure 3. Output Power versus Frequency
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MRF1150MB transistor
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