MRF859 반도체 회로 부품 판매점
NPN SILICON RF POWER TRANSISTOR
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF859/D
The RF Line
NPN Silicon
RF Power Transistor
MRF859
MRF859S
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 to 960 MHz.
• Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics
Output Power = 6.5 Watts CW
Minimum Power Gain = 11.5 dB
Minimum ITO = + 47 dBm
Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 2 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit Board Photomaster Available by Ordering Document MRF859PHT/D
from Motorola Literature Distribution.
CLASS A
800 – 960 MHz
6.5 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF859
CASE 319A–02, STYLE 2
MRF859S
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 60°C
Derate above 60°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150°C, TC = 60°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector Cutoff Current (VCB = 15 V, IE = 0)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
RθJC
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
Min
28
55
55
4
—
Value
30
55
4
34
0.24
200
– 65 to +150
Max
3.9
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Typ Max Unit
32 — Vdc
75 — Vdc
75 — Vdc
5 — Vdc
— 2 mA
(continued)
REV 2
©MMOotTorOolRa,OInLc.A19R95F DEVICE DATA
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MRF859 MRF859S
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ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W)
Load Mismatch
(VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.9 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.9 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W)
Symbol
hFE
Min
20
Typ Max Unit
60 120 —
Cob 13 — 26 pF
Pg
ψ
Pin(over)
ITO
NF
IRL
11.5 13 —
No Degradation in
Output Power
— —2
+ 47 + 48 —
— 6—
— — –9
dB
W
dBm
dB
dB
VCE
(V)
24
IC f
(A) (MHz)
0.9 800
820
840
860
880
900
920
940
960
Table 1. Common Emitter S–Parameters
S11
|S11|
0.906
0.902
0.897
0.894
0.893
0.893
0.894
0.897
0.903
∠φ
170
170
171
171
171
171
172
172
172
S21
|S21|
1.022
1.022
1.018
1.012
1.005
0.988
0.962
0.924
0.884
∠φ
12
7
3
–3
–8
– 14
– 20
– 26
– 32
S12
|S12|
0.016
0.015
0.013
0.011
0.009
0.007
0.005
0.008
0.004
∠φ
11
8
6
4
3
5
14
47
102
S22
|S22|
∠φ
0.804
0.823
0.845
0.870
0.895
0.920
0.946
0.969
0.987
– 168
– 167
– 167
– 167
– 168
– 168
– 169
– 170
– 172
f
(MHz)
840
870
900
Table 2. Zin and ZOL* versus Frequency
Zin
(Ohms)
1.6 3.3
2
1.5 3.6 1.6
2.2 3.5 1.7
ZOL*
(Ohms)
– 4.1
– 3.3
– 2.7
VCE = 24 V, IC = 0.9 A, Po = 6.5 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF859 MRF859S
2
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MRF859 transistor
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