MRF9030R1 반도체 회로 부품 판매점
RF POWER FIELD EFFECT TRANSISTORS
|
|
 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9030/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9030R1
MRF9030SR1
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9030R1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 360C–05, STYLE 1
NI–360S
MRF9030SR1
MRF9030R1
MRF9030SR1
Symbol
VDSS
VGS
PD
PD
Tstg
TJ
MRF9030R1
MRF9030SR1
Symbol
RθJC
Value
68
–0.5, +15
92
0.53
117
0.67
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Max
1.9
1.5
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9030R1 MRF9030SR1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
IDSS
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VGS(th)
VGS(Q)
VDS(on)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
Crss
Min
—
—
—
2
—
—
—
—
—
—
Typ
—
—
—
2.9
3.8
0.19
3
49.5
26.5
1
Max Unit
10 µAdc
1 µAdc
1 µAdc
4 Vdc
— Vdc
0.4 Vdc
—S
— pF
— pF
— pF
(continued)
MRF9030R1 MRF9030SR1
2
MOTOROLA RF DEVICE DATA
|
PDF 파일 내의 페이지 : 총 12 페이지
제조업체: Motorola Semiconductors
( motorola )
MRF9030R1 transistor
데이터시트 다운로드 :
[ MRF9030R1.PDF ]
[ MRF9030R1 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
