SPW20N60CFD 반도체 회로 부품 판매점
Cool MOS Power Transistor
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 Infineon Technologies |
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Intrinsic fast-recovery body diode
• Extreme low reverse recovery charge
SPW20N60CFD
VDS @ Tjmax
RDS(on)
ID
650
0.22
20.7
V
Ω
A
P-TO247
Type
Package
SPW20N60CFD P-TO247
Ordering Code
Q67040-S4617
Marking
20N60CFD
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V
ID puls
EAS
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Reverse diode dv/dt
dv/dt
IS=20.7A, VDS=480V, Tj=125°C
Gate source voltage
Gate source voltage AC (f >1Hz)
VGS
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Page 1
Value
20.7
13.1
52
690
Unit
A
mJ
1
20 A
40 V/ns
±20
±30
208
-55... +150
V
W
°C
2003-12-23
SPW20N60CFD
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Maximum diode commutation speed
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Symbol
dv/dt
di F/dt
Value
80
900
Unit
V/ns
A/µs
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC
RthJA
T sold
Values
Unit
min. typ. max.
- - 0.6 K/W
- - 62
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V (BR)DSS VGS=0V, ID=0.25mA
V (BR)DS VGS=0V, ID=20A
600
-
-
700
-V
-
Gate threshold voltage
Zero gate voltage drain current
V GS(th)
IDSS
ID=1000µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
3
-
-
4
2.1
1700
5
µA
-
-
Gate-source leakage current
Drain-source on-state resistance
IGSS
RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=13.1A,
Tj=25°C
Tj=150°C
-
-
-
-
0.19
0.51
100
0.22
-
nA
Ω
Gate input resistance
RG f=1MHz, open Drain - 0.54 -
Page 2
2003-12-23
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제조업체: Infineon Technologies
( infineon )
SPW20N60CFD transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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