MRF6408 반도체 회로 부품 판매점
RF POWER TRANSISTOR NPN SILICON
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for PCN and PCS base station applications, the MRF6408
incorporates high value emitter ballast resistors, gold metallizations and offers
a high degree of reliability and ruggedness.
• To be used in class AB for PCN–PCS / Cellular Radio
• Specified 26 Volts, 1.88 GHz Characteristics
Output Power = 12 Watts CW
Typical Gain = 8.8 dB
Typical Efficiency = 42%
• Specified 26 Volts, 1.99 GHz Characteristics
Output Power = 12 Watts CW
Typical Gain = 8.3 dB
Typical Efficiency = 39%
• Circuit Board Photomaster Available by Ordering Document
MRF6408PHT/D from Motorola Literature Distribution.
Order this document
by MRF6408/D
MRF6408
12 W, 2.0 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
Emitter–Base Breakdown Voltage
(IB = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Symbol
RθJC
Min
24
4
55
—
Value
24
60
4
5
60
0.35
– 65 to +150
200
Max
2.8
Typ Max
30 —
5—
64 —
—6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
REV 2
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF6408
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
hFE 20 35 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance (2)
(VCB = 26 Vdc, IE = 0, f = 1 MHz)
Cob — 18 — pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.88 GHz)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.88 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz)
Output Power at 1 dB Compression Point
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.88 GHz)
Output Power at 1 dB Compression Point
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.99 GHz)
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 12 W (PEP), ICQ = 100 mA,
f1 = 1880 MHz, f2 = 1880.1 MHz)
Gpe
Gpe
η
η
P @ 1 dB
P @ 1 dB
IMD
7.8
7.5
37
34
15
14
—
8.8 — dB
8.3 — dB
42 — %
39 — %
——W
——W
– 35 – 30 dBc
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 12 W (PEP), ICQ = 100 mA,
f1 = 1990 MHz, f2 = 1990.1 MHz)
IMD — – 35 – 30 dBc
Load Mismatch
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
ψ
No Degradation in Output Power
(2) For information only. This part is collector matched.
MRF6408
2
MOTOROLA RF DEVICE DATA
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MRF6408 transistor
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