BSS229 반도체 회로 부품 판매점
SIPMOS Small-Signal Transistor
|
|
 Siemens Semiconductor |
SIPMOS® Small-Signal Transistor
q VDS 250 V
q ID
0.07 A
q RDS(on) 100 Ω
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in VGS(th)
BSS 229
1 23
Type
Ordering
Code
Tape and Reel
Information
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
2 reels/carton; source first
Pin Configuration Marking Package
123
GDS
SS229 TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
Values
250
250
± 14
± 20
0.07
0.21
0.63
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
–
–
≤ 200
E
55/150/56
K/W
–
Semiconductor Group
1
04.97
BSS 229
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain-source breakdown voltage
VGS = − 3 V, ID = 0.25 mA
Gate threshold voltage
VDS = 3 V, ID = 1 mA
Drain-source cutoff current
VDS = 250 V, VGS = − 3 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-resistance
VGS = 0 V, ID = 0.014 A
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R ,DS(on)max ID = 0.07 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω,
ID = 0.15 A
Turn-off time toff, (toff = td(off) + tf)
VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω,
ID = 0.15 A
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
250
− 1.8
–
–
–
–
0.05
–
–
–
–
–
–
–
–
− 1.4
–
–
10
75
0.10
85
6
2
4
10
10
15
–
− 0.7
100
200
100
100
–
120
10
3
6
15
13
20
V
nA
µA
nA
Ω
S
pF
ns
Semiconductor Group
2
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Siemens Semiconductor
( siemens )
BSS229 transistor
데이터시트 다운로드 :
[ BSS229.PDF ]
[ BSS229 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BSS223PW
OptiMOS -P Small-Signal-Transistor - Infineon Technologies AG
BSS223PW
OptiMOS -P Small-Signal-Transistor - INFINEON
BSS225
Small-Signal-Transistor - Infineon Technologies
BSS229
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) - Siemens Semiconductor Group
BSS229
SIPMOS Small-Signal Transistor - Siemens Semiconductor