MPS650 반도체 회로 부품 판매점
(MPS651) Amplifier Transistors
|
|
 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS650/D
Amplifier Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MPS650 MPS651
MPS750 MPS751
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE
VCB
VEB
IC
PD
40 60
60 80
5.0
2.0
625
5.0
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS650, MPS750
MPS651, MPS751
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
MPS650, MPS750
MPS651, MPS751
Emitter – Base Breakdown Voltage
(IC = 0, IE = 10 µAdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
MPS650, MPS750
MPS651, MPS751
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
NPN
MPS650
MPS651 *
PNP
MPS750
MPS751 *
Voltage and current are
negative for PNP transistors
*Motorola Preferred Devices
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
40
60
60
80
5.0
—
—
—
Max Unit
Vdc
—
—
Vdc
—
—
— Vdc
µAdc
0.1
0.1
0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
NPN MPS650 MPS651 PNP MPS750 MPS751
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE —
75 —
75 —
75 —
40 —
Collector – Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
—
—
Vdc
0.5
0.3
Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
—
1.0 Vdc
Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
VBE(sat)
fT
—
75
1.2 Vdc
— MHz
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
300
270
240 TJ = 125°C
NPN
VCE = 2.0 V
210
180 25°C
150
120
– 55°C
90
60
30
0
10 20
50 100 200 500 1.0 A 2.0 A 4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 1. MPS650, MPS651
Typical DC Current Gain
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
NPN
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
100 200
500 1.0 A
IC, COLLECTOR CURRENT (mA)
2.0 A
Figure 3. MPS650, MPS651
On Voltages
4.0 A
250
225 TJ = 125°C
200
PNP
VCE = –2.0 V
175
25°C
150
125
100 – 55°C
75
50
25
0
–10 – 20
– 50 –10 – 200 – 500 –1.0 A –2.0 A –4.0 A
IC, C0OLLECTOR CURRENT (mA)
Figure 2. MPS750, MPS751
Typical DC Current Gain
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
0
–50
PNP
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
–10 –20
–50 –1.0 A –2.0 A –4.0 A
0 IC, CO0LLECTOR CU0RRENT (mA)
Figure 4. MPS750, MPS751
On Voltages
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Motorola Semiconductors
( motorola )
MPS650 transistor
데이터시트 다운로드 :
[ MPS650.PDF ]
[ MPS650 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
MPS650
NPN SILICON PLANAR AMPLIFIER TRANSISTORS - CDIL
MPS650
(MPS651) Amplifier Transistors - Motorola Semiconductors
MPS650
(MPS650 / MPS651 / MPS750 / MPS751) Amplifier Transistors - ON Semiconductor
MPS650
SILICON TRANSISTORS - Central Semiconductor
MPS650
Trans GP BJT NPN 40V 2A 3-Pin TO-92 Box - New Jersey Semiconductor
MPS6500
ONE-CHIP MICROCOMPUTER - Commodore
MPS6501
ONE-CHIP MICROCOMPUTER - Commodore
MPS6507
Amplifier Transistor - Motorola Semiconductors
MPS6507
(MPSxxxx) RF-IF High Frequency Transistors - Micro Electronics