MRF10501 반도체 회로 부품 판매점
MICROWAVE POWER TRANSISTORS
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
. . . designed for 1025 – 1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized with 10 µs, 1% Duty Cycle Pulses
Order this document
by MRF10500/D
MRF10500
MRF10501
500 W (PEAK)
1025 – 1150 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 355D–02, STYLE 1
MRF10500
CASE 355H–01, STYLE 1
MRF10501
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
65
65
3.5
29
1460
8.3
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Tstg – 65 to + 200
TJ 200
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RθJC 0.12 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 32 µs, 2%.)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF10500 MRF10501
2–1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
GPB
Collector Efficiency
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
η
Load Mismatch
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
Min Typ Max Unit
65 — — Vdc
65 — — Vdc
3.5 —
— Vdc
— — 25 mAdc
20 — — —
8.5 9.0 — dB
40 45 — %
No Degradation in Output Power
RF INPUT
Z5
Z1 Z2 Z3 Z4
L1
D.U.T.
C2
C3
Z6 Z7 Z8 Z9
+
C4
C1
+
–
RF OUTPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
.150
.625
.700
.160
.081
1.309
.105
1.123
.216
.081
2.000
1.108
.500
0.140
.355
.081
.100
.644
.365
Figure 1. Test Circuit
MRF10500 MRF10501
2–2
MOTOROLA RF DEVICE DATA
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MRF10501 transistor
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