2N1613 반도체 회로 부품 판매점
NPN medium power transistor
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 Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1613
NPN medium power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 11
Philips Semiconductors
NPN medium power transistor
Product specification
2N1613
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• High-speed switching and amplification.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
MIN.
open emitter
open base
−
−
−
Tamb ≤ 25 °C
IC = 150 mA; VCE = 10 V
IC = 50 mA; VCE = 10 V; f = 100 MHz
−
40
60
MAX.
75
50
1
0.8
120
−
UNIT
V
V
A
W
MHz
1997 Apr 11
2
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2N1613 transistor
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