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Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
PMBT5401
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 15
Philips Semiconductors
PNP high-voltage transistor
Product specification
PMBT5401
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 150 V).
APPLICATIONS
• Switching and amplification in high voltage applications
such as telephony.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: PMBT5550.
MARKING
TYPE NUMBER
PMBT5401
MARKING CODE(1)
∗2L
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−160
−150
−5
−300
−600
−100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
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