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Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBS3904
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 20
1999 Apr 22
Philips Semiconductors
NPN general purpose transistor
Product specification
PMBS3904
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and amplification, e.g.
telephony and professional communication equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a plastic SOT23 package.
PNP complement: PMBS3906.
MARKING
TYPE NUMBER
PMBS3904
MARKING CODE(1)
∗O4
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
1
Top view
1
2
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
40
6
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 22
2
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