NTE2511 반도체 회로 부품 판매점
Silicon Complementary Transistors High Frequency Video Output for HDTV
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 NTE |
NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 800MHz Typ.
D Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: Cre = 2.9pF
NTE2512: Cre = 4.6pF
Applications:
D Very High–Definition CRT Display
D Video Output
D Color TV Chroma Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 60V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 50mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 100mA
Min Typ Max Unit
– – 0.1 µA
– – 1.0 µA
100 – 320
20 – –
– 800 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Emitter Saturation Voltage
NTE2511
NTE2512
VCE(sat)
IC = 100mA, IB = 10mA
– – 0.6 V
– – 0.8 V
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Output Capacitance
NTE2511
NTE2512
VBE(sat) IC = 100mA, IB = 10mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE = ∞
V(BR)EBO IE = 100µA, IC = 0
Cob
VCB = 30V, f = 1MHz
– – 1.0 V
80 – – V
60 – – V
4––V
– 3.4 – pF
– 5.2 – pF
Reverse Transfer Capacitance
NTE2511
NTE2512
Cre
VCB = 30V, f = 1MHz
– 2.9 – pF
– 4.6 – pF
.450
(11.4)
Max
.330 (8.38)
Max
.175
(4.45)
Max
.655
(16.6)
Max
EC B
.118 (3.0)
Dia
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: NTE
( nte )
NTE2511 transistor
데이터시트 다운로드 :
[ NTE2511.PDF ]
[ NTE2511 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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