SRC1212SF 반도체 회로 부품 판매점
NPN Silicon Transistor
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 AUK |
Semiconductor
Descriptions
• Switching application
• Interface circuit and driver circuit application
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and manufacturing process
• High packing density
Ordering Information
Type NO.
SRC1212SF
Marking
RCB
Outline Dimensions
2.4±0.1
1.6±0.1
1
3
2
SRC1212SF
NPN Silicon Transistor
Package Code
SOT-23F
unit : mm
• Equivalent Circuit
C(OUT)
B(IN)
R1
R1 = 100KΩ
PIN Connections
1. Base
2. Emitter
3. Collector
E(COMMON)
KSR-2034-001
1
SRC1212SF
Absolute maximum ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Ratings
50
50
5
100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
* : Characteristic of Transistor Only
Symbol
Test Condition
ICBO
IEBO
hFE
VCE(SAT)
fT*
R1
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
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Electrical Characteristic Curves
Min.
-
-
120
-
-
-
Typ.
-
-
-
0.1
250
100
(Ta=25°C)
Max. Unit
500 nA
500 nA
--
0.3 V
- MHz
- KΩ
Fig. 1 hFE - IC
Fig. 2 VCE(SAT) - IC
KSR-2034-001
2
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제조업체: AUK
( auk )
SRC1212SF transistor
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[ SRC1212SF.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
