MMBTH81 반도체 회로 부품 판매점
PNP RF Transistor
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 Fairchild |
Discrete POWER & Signal
Technologies
MPSH81
MMBTH81
C
C
EB
TO-92
SOT-23
Mark: 3D
E
B
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
20
VCBO
Collector-Base Voltage
20
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH81
350
2.8
125
357
*MMBTH81
225
1.8
556
Units
mW
mW /°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
H81, Rev B
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
PNP RF Transistor
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VEB = 2.0 V, IC = 0
20 V
20 V
3.0 V
100 nA
100 nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 5.0 mA, VCE = 10 V
IC = 5.0 mA, IB = 0.5 mA
IC = 5.0 mA, VCE = 10 V
60
0.5
0.9
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 5.0 mA, VCE = 10 V,
f = 100 MHz
600
MHz
Ccb Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.85 pF
Cce Collector Emitter Capcitance
VCB = 10 V, IB = 0, f = 1.0 MHz
0.65 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
DC Typical Characteristics
DC Current Gain vs.
Collector Current
Collector Saturation Voltage
vs. Collector Current
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MMBTH81 transistor
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