PDTC143XT 반도체 회로 부품 판매점
NPN resistor-equipped transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC143XT
NPN resistor-equipped transistor
Product specification
1999 Apr 20
Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC143XT
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ and 10 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a
SOT23 plastic package.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
handbook, 4 columns
1
Top view
3
R1
1
R2
2
MAM097
3
2
Fig.1 Simplified outline (SOT23) and symbol.
1
MGA893 - 1
2
3
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTC143XT
MARKING
CODE(1)
∗32
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
IO
ICM
Ptot
Tstg
Tj
Tamb
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT23 standard mounting conditions.
1999 Apr 20
2
MIN.
−
−
−
MAX.
50
50
10
UNIT
V
V
V
− 20 V
− −7 V
− 100 mA
− 100 mA
− 250 mW
−65
+150
°C
− 150 °C
−65
+150
°C
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PDTC143XT transistor
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