PDTA143 반도체 회로 부품 판매점
PNP resistor-equipped transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTA143EE
PNP resistor-equipped transistor
Product specification
Supersedes data of 1997 Jul 02
File under Discrete Semiconductors, SC04
1998 Jul 23
Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA143EE
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in
an SC-75 plastic package.
NPN complement: PDTC143EE.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground (+)
3 collector/output
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IO
ICM
Ptot
hFE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR-----21-- resistor ratio
handbook, halfpage 3
1
Top view
2
R1
1
R2
3
2
MAM345
Fig.1 Simplified outline (SC-75) and symbol.
1
MGA893 - 1
2
3
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTA143EE
MARKING
CODE
01
CONDITIONS
open base
Tamb ≤ 25 °C
IC = −10 mA; VCE = −5 V
MIN.
−
−
−
−
30
3.3
TYP.
−
−
−
−
−
4.7
MAX.
−50
−100
−100
150
−
6.1
UNIT
V
mA
mA
mW
kΩ
0.8 1
1.2
1998 Jul 23
2
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PDTA143 transistor
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