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Zetex Semiconductors |
ZXT10N50DE6
SuperSOT™
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=50V; RSAT = 75m ; IC= 3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
• Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 12A
• IC=3A Continuous Collector Current
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
ZXT10N50DE6TA
7 8mm embossed
ZXT10N50DE6TC
13 8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
619
SOT23-6
C
C
B
Top View
C
C
E
ISSUE 1 - SEPTEMBER 2000
1
ZXT10N50DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
PD
PD
Tj:Tstg
LIMIT
50
50
5
6
3
500
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
113 °C/W
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 1 - SEPTEMBER 2000
2
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