UPA1456H 반도체 회로 부품 판매점
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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 NEC |
DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1456
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1456 is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
ORDERING INFORMATION
Part Number
µPA1456H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage VCEO 100
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
±5 A/unit
Collector Current (pulse)
IC(pulse)* ±10 A/unit
Base Current (DC)
IB(DC)
0.5 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
1.4 0.6 ±0.1
2.54
1.4
0.5 ±0.1
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3579
2468
1
10
(C)
(B)
R1 R2
(E)
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =.. 3.0 kΩ
R2 =.. 300 Ω
Document No. IC-3521
(O. D. No. IC-6340)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
µPA1456
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Time
Storage Time
Fall Time
SYMBOL
ICBO
IEBO
hFE1
*
hFE2
*
*VCE(sat)
*VBE(sat)
ton
tstg
tf
MIN.
2000
500
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
TYP.
7000
3000
0.9
1.6
1
3
1
MAX.
10
10
20000
1.5
2
UNIT
µA
mA
—
—
V
V
µs
µs
µs
TEST CONDITIONS
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 2 A
VCE = 2 V, IC = 4 A
IC = 2 A, IB = 2 mA
IC = 2 A, IB = 2 mA
IC = 2 A
IB1 = –IB2 = 2 mA
VCC =.. 50 V, RL =.. 25 Ω
See test circuit
SWITCHING TIME TEST CIRCUIT
VIN
PW
PW =.. 50 µ s
Duty Cycle ≤ 2 %
RL = 25 Ω
IC
IB1
IB2 T.U.T.
VBB =.. –5 V
Base Current
Wave Form
VCC =.. 50 V
Collector
Current
Wave Form
IB1
IB2
90 %
10 %
IC
ton tstg tf
2
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UPA1456H transistor
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관련 데이터시트
UPA1456
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE - NEC
UPA1456H
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE - NEC