UN6210 반도체 회로 부품 판매점
Silicon NPN epitaxial planer transistor
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 Panasonic Semiconductor |
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q MT-1 type package, allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Resistance by Part Number
q UN6211
q UN6212
q UN6213
q UN6214
q UN6215
q UN6216
q UN6217
q UN6218
q UN6219
q UN6210
q UN621D
q UN621E
q UN621F
q UN621K
q UN621L
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
Internal Connection
R1
B
R2
C
E
1
UN6211/6212/6213/6214/6215/6216/6217/6218/
Transistors with built-in Resistor
6219/6210/621D/621E/621F/621K/621L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN6211
ICBO
ICEO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
UN6212/6214/621E/621D
Emitter
cutoff
current
UN6213
UN6215/6216/6217/6210
UN621F/621K
IEBO
VEB = 6V, IC = 0
UN6219
UN6218/621L
Collector to base voltage
Collector to emitter voltage
UN6211
VCBO
VCEO
IC = 10µA, IE = 0
IC = 2mA, IB = 0
50
50
35
Forward
current
transfer
ratio
UN6212/621E
UN6213/6214
hFE
UN6215*/6216*/6217*/6210*
UN621F/621D/6219
VCE = 10V, IC = 5mA
60
80
160
30
UN6218/621K/621L
20
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
VCE(sat)
VOH
UN6213/621K VOL
UN621D
UN621E
Transition frequency
fT
UN6211/6214/6215/621K
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VOC = 5V, VB = 3.5V, R1 = 1kΩ
VCC = 5V, VB = 10V, R1 = 1kΩ
VCC = 5V, VB = 6V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
Input
resis-
tance
UN6212/6217
UN6213/621D/621E/6210
UN6216/621F/621L
UN6218
R1
(–30%)
UN6219
UN6211/6212/6213/621L
0.8
UN6214
0.17
Resis-
tance
ratio
UN6218/6219
UN621D
UN621E
R1/R2
0.08
3.7
1.7
UN621F
0.37
UN621K
1.7
typ max Unit
0.1 µA
0.5 µA
0.5
0.2
0.1
0.01 mA
1.0
1.5
2.0
V
V
460
0.25 V
V
0.2
0.2 V
0.2
0.2
150 MHz
10
22
47
(+30%) kΩ
4.7
0.51
1
1.0 1.2
0.21 0.25
0.1 0.12
4.7 5.7
2.14 2.6
0.47 0.57
2.13 2.6
* hFE rank classification (UN6215/6216/6217/6210)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2
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( panasonic )
UN6210 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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