UMH7N 반도체 회로 부품 판매점
General purpose (dual digital transistors)
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 ROHM Semiconductor |
Transistors
UMH7N / IMH7A
General purpose (dual digital transistors)
UMH7N / IMH7A
!Features
1) Includes two DTC143T transistors in a single UMT
package.
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power UMH7N
dissipation
FMG13, IMH7A
Pc
Junction temperature
Tj
Storage temperature
Tstg
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
Unit
V
V
V
mA
mW
∗1
∗2
˚C
˚C
!Package, marking, and Packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
UMH7N
UMT6
H7
TR
3000
IMH7A
SMT6
H7
T108
3000
!External dimensions (Units : mm)
UMH7N
1.25
2.1
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
IMH7A
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
!Circuit diagram
UMH7N
IMH7A
R1 R1
R1 R1
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
R1
Min.
50
50
5
−
−
100
−
3.29
Typ.
−
−
−
−
−
250
−
4.7
Max.
−
−
−
0.5
0.5
600
0.3
6.11
Unit Conditions
V IC=50µA
V IC=1mA
V IE=50µA
µA VCB=50V
µA VEB=4V
− VCE / IC=5V / 1mA
V IC / IB=5mA / 0.25mA
kΩ −
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PDF 파일 내의 페이지 : 총 1 페이지
제조업체: ROHM Semiconductor
( rohm )
UMH7N transistor
데이터시트 다운로드 :
[ UMH7N.PDF ]
[ UMH7N 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
