BUK104-50L 반도체 회로 부품 판매점
PowerMOS transistor Logic level TOPFET
|
|
 NXP Semiconductors |
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK104-50L/S
BUK104-50LP/SP
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 5 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
SYMBOL
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
VIS = 5 V
VIS = 7 V
PARAMETER
VPSN
Protection supply voltage
BUK104-50L
BUK104-50S
MAX.
50
15
40
150
125
100
NOM.
UNIT
V
A
W
˚C
mΩ
mΩ
UNIT
5V
10 V
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY
FLAG
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
Fig.1. Elements of the TOPFET.
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT263
PIN DESCRIPTION
1 input
2 flag
3 drain
4 protection supply
5 source
tab drain
PIN CONFIGURATION
SYMBOL
tab
1 2345
leadform
263-01
Fig. 2. Type numbers ending with
suffix P refer to leadform 263-01.
TOPFET
P
FP
I
D
S
Fig. 3.
January 1993
1
Rev 1.200
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK104-50L/S
BUK104-50LP/SP
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VIS
VFS
VPS
ID
ID
IDRM
Ptot
Tstg
Tj
Tsold
Voltages
Continuous off-state drain source
voltage1
Continuous input voltage
Continuous flag voltage
Continuous supply voltage
Currents
Continuous drain current
Continuous drain current
Repetitive peak on-state drain current
Thermal
Total power dissipation
Storage temperature
Junction temperature2
Lead temperature
VIS = 0 V
-
-
-
Tmb ≤ 25 ˚C
Tmb ≤ 100 ˚C
Tmb ≤ 25 ˚C
Tmb = 25 ˚C
-
continuous
during soldering
VIS =
MIN.
-
0
0
0
-
-
-
-
-
-55
-
-
MAX.
50
11
11
11
75
15 13
9.5 8.5
60 54
40
150
150
250
UNIT
V
V
V
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply
connected, TOPFET can protect
itself from two types of overload -
over temperature and short circuit
load.
An n-MOS transistor turns on
between the input and source to
quickly discharge the power
MOSFET gate capacitance.
For internal overload protection to
remain latched while the control
circuit is high, external series input
resistance must be provided. Refer
to INPUT CHARACTERISTICS.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VPSP
Protection supply voltage3
VIS = 7 5
for valid protection
BUK104-50L 4.4 4
BUK104-50S 5.4 5
-
-
-
V
V
V
VDDP(T)
VDDP(P)
PDSM
Over temperature protection
VPS = VPSN
Protected drain source supply voltage VIS = 10 V; RI ≥ 2 kΩ
VIS = 5 V; RI ≥ 1 kΩ
Short circuit load protection
VPS = VPSN; L ≤ 10 µH
Protected drain source supply voltage4 VIS = 10 V; RI ≥ 2 kΩ
VIS = 5 V; RI ≥ 1 kΩ
Instantaneous overload dissipation
- 50 V
- 50 V
- 25 V
- 45 V
- 0.8 kW
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The minimum supply voltage required for correct operation of the overload protection circuits.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993
2
Rev 1.200
|
PDF 파일 내의 페이지 : 총 14 페이지
제조업체: NXP Semiconductors
( nxp )
BUK104-50L transistor
데이터시트 다운로드 :
[ BUK104-50L.PDF ]
[ BUK104-50L 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BUK104-50L
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50L
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50LP
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50LP
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50S
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50S
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50SP
PowerMOS transistor Logic level TOPFET - NXP Semiconductors
BUK104-50SP
PowerMOS transistor Logic level TOPFET - NXP Semiconductors