BUK101-50DL 반도체 회로 부품 판매점
PowerMOS transistor Logic level TOPFET
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 NXP Semiconductors |
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK101-50DL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
IISL
Input supply current
VIS = 5 V
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
26
75
150
60
650
UNIT
V
A
W
˚C
mΩ
µA
DRAIN
POWER
MOSFET
SOURCE
PINNING - TO220AB
PIN DESCRIPTION
1 input
2 drain
3 source
tab drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
tab D
TOPFET
I
P
1 23
S
April 1993 1 Rev 1.100
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK101-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
Continuous drain source voltage1
-
VIS Continuous input voltage
-
ID Continuous drain current
Tmb ≤ 25 ˚C; VIS = 5 V
ID Continuous drain current
Tmb ≤ 100 ˚C; VIS = 5 V
IDRM Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V
PD Total power dissipation
Tmb ≤ 25 ˚C
Tstg Storage temperature
-
Tj
Continuous junction temperature2
normal operation
Tsold Lead temperature
during soldering
MIN.
-
0
-
-
-
-
-55
-
-
MAX.
50
6
26
16
100
75
150
150
250
UNIT
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VISP Protection supply voltage3
Over temperature protection
for valid protection
4-V
VDDP(T)
VDDP(P)
PDSM
Protected drain source supply voltage VIS = 5 V
Short circuit load protection4
Protected drain source supply voltage5 VIS = 5 V
Instantaneous overload dissipation Tmb = 25 ˚C
- 50 V
- 20 V
- 1.3 kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
IDROM
EDSM
EDRM
Repetitive peak clamping current
Non-repetitive clamping energy
Repetitive clamping energy
VIS = 0 V
Tmb ≤ 25 ˚C; IDM = 26 A;
VDD ≤ 20 V; inductive load
Tmb ≤ 95 ˚C; IDM = 8 A;
VDD ≤ 20 V; f = 250 Hz
- 26 A
- 625 mJ
- 40 mJ
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
PDSM, which is always the case when VDS is less than VDDP(P) maximum.
April 1993 2 Rev 1.100
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BUK101-50DL transistor
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