BUJ302A 반도체 회로 부품 판매점
Silicon Diffused Power Transistor
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 NXP Semiconductors |
BUJ302A
NPN power transistor
Rev. 02 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78
(TO-220AB) plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Low thermal resistance
1.3 Applications
DC-to-DC converters
High-frequency electronic lighting
ballast applications
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
IC
Quick reference data
Parameter
collector current
Ptot
VCESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
hFE DC current gain
Conditions
see Figure 1; see Figure 2;
see Figure 4
Tmb ≤ 25 °C; see Figure 3
VBE = 0 V
Min Typ Max Unit
- - 4A
- - 80 W
- - 1050 V
IC = 0.1 A; VCE = 5 V;
[1] 48 66 100
Tmb = 25 °C; see Figure 11
IC = 0.8 A; VCE = 3 V;
[1] 25 42 50
Tmb = 25 °C; see Figure 12
[1] Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B base
C collector
E emitter
C mounting base; connected to
collector
Simplified outline
mb
BUJ302A
NPN power transistor
Graphic symbol
C
B
E
sym123
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUJ302A
TO-220AB
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
VEBO
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
emitter-base voltage
VBE = 0 V
IB = 0 A
see Figure 1; see Figure 2; see Figure 4
Tmb ≤ 25 °C; see Figure 3
IC = 0 A; IE = 2 A; tp < 10 ms
Min Max Unit
- 1050 V
- 400 V
- 4A
- 8A
- 2A
- 4A
- 80 W
-65 150 °C
- 150 °C
- 24 V
BUJ302A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 March 2011
© NXP B.V. 2011. All rights reserved.
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BUJ302A transistor
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