Q62702-C2330 반도체 회로 부품 판매점
PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
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 Siemens Semiconductor Group |
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC817W, BC818W (NPN)
BC 807-16W
Type
BC 807-16W
BC 807-25W
BC 807-40W
BC 808-16W
BC 808-25W
BC 808-40W
Marking Ordering Code
5As Q62702-C2325
5Bs Q62702-C2326
5Cs Q62702-C2327
5Es Q62702-C2328
5Fs Q62702-C2329
5Gs Q62702-C2330
Pin Configuration
1=B
2=E
1=B
2=E
1=B
2=E
1=B
2=E
1=B
2=E
1=B
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BC 807 W
VCEO
BC 808 W
Collector-base voltage
BC 807 W
VCBO
BC 808 W
Emitter-base voltage
DC collector current
Peak collector current
Base current
Total power dissipation, TS = 130°C
Junction temperature
Storage temperature
VEBO
IC
ICM
IB
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Values
45
25
50
30
5
500
1
100
250
150
- 65 ... + 150
≤ 215
≤ 80
Semiconductor Group
1
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Unit
V
mA
A
mA
mW
°C
K/W
Dec-19-1996
BC 807-16W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC 807 W
IC = 10 mA, IB = 0 , BC 808 W
Collector-base breakdown voltage
IC = 10 µA, IB = 0 , BC 807 W
IC = 10 µA, IB = 0 , BC 808 W
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 25 V, TA = 25 °C
VCB = 25 V, TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain
IC = 100 mA, VCE = 1 V, BC ... 16 W
IC = 100 mA, VCE = 1 V, BC ... 25 W
IC = 100 mA, VCE = 1 V, BC ... 40 W
IC = 300 mA, VCE = 1 V, BC ... 16 W
IC = 300 mA, VCE = 1 V, BC ... 25 W
IC = 300 mA, VCE = 1 V, BC ... 40 W
Collector-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
1) Pulse test: t < 300µs; D < 2%
V(BR)CEO
45
25
V(BR)CBO
50
30
V(BR)EBO
5
ICBO
-
-
IEBO
-
hFE
100
160
250
60
100
170
VCEsat
-
VBEsat
-
-
-
-
-
-
-
-
-
160
250
350
-
-
-
-
-
max.
-
-
-
-
-
100
50
100
250
400
630
-
-
-
0.7
1.2
Unit
V
nA
µA
nA
-
V
Semiconductor Group
2
Dec-19-1996
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PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Siemens Semiconductor Group
( siemens )
Q62702-C2330 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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