PTF211301 반도체 회로 부품 판매점
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
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 Infineon Technologies AG |
PTF211301
LDMOS RF Power Field Effect Transistor
130 W, 2110–2170 MHz
Description
Features
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended
for WCDMA applications. It is characaterized for single– and two–carrier
WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures
excellent device lifetime and reliability.
Two–Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz,
3GPP WCDMA signal, P/A R = 8 dB,
10 MHz carrier spacing
-30 35
-35
-40
IM3
-45
Ef f iciency
30
25
20
• Broadband internal matching
• Typical two–carrier WCDMA performance at
2140 MHz
- Average output power = 28 W
- Linear Gain = 13.5 dB
- Efficiency = 25%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –42 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 148 W
- Efficiency = 50%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
-50 15
-55
-60
36
ACPR
10
38 40 42 44
Average Output Power (dBm)
5
46
PTF211301A
Package 20260
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol Min Typ
IMD — –37
Gps — 13.5
ηD — 25
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
12
34
—
Typ
13.5
37
–30
Max
—
—
–28
Units
dB
%
dBc
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
2004-01-02
PTF211301
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 1.5 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
RDS(on)
VGS
IGSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 130 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Typical Performance (data taken in a production test fixture)
Min Typ
65 —
——
— 0.07
2.5 3.2
——
Max
—
1.0
—
4.0
1.0
Value
65
–0.5 to +12
200
350
2.0
–40 to +150
0.50
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Broadband Performance
VDD = 28 V, IDQ = 1.50 A, POUT = 44 dBm
45 -5
40 -10
Input Return Loss
35 -15
30 -20
25 Efficiency
20
15 Gain
-25
-30
-35
10
2060
2110
2160
-40
2210
Frequency (MHz)
Intermodulation Distortion Products &
Efficiency vs. Output Power
VDD = 28V, IDQ = 1.50 A, f = 2140 MHz,
tone spacing = 1 MHz
-30 40
-35
Ef f iciency
35
-40 30
-45 IM3
-50
25
20
-55
-60 IM5
15
10
-65
IM7
-70
5
0
38 40 42 44 46 48 50 52
Output Power, PEP (dBm)
Data Sheet 2 2004-01-02
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제조업체: Infineon Technologies AG
( infineon )
PTF211301 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
PTF211301
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz - Infineon Technologies AG
PTF211301A
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz - Infineon Technologies AG