PTF180101S 반도체 회로 부품 판매점
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
|
 Infineon Technologies AG |
PTF180101
LDMOS RF Power Field Effect Transistor
10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
Features
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in-
tended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
•
EDGE EVM Performance
EVM and Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
4 40
Ef f icienc y
3 30
•
•
2 20
1 10
EVM
00
25 30 35 40
Output Power (dBm)
•
•
•
•
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
PTF180101S
Package 32259
RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
Gps
ηD
Min
—
—
—
—
—
Typ
1.1
–60
–70
19
28
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
Symbol Min Typ
Gps
ηD
IMD
18 19
30 33
— –30
Max
—
—
–28
Units
dB
%
dBc
1 2004-02-03
PTF180101
RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol Min Typ
ACPR
— –45
Gps — 18
ηD — 20
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency @ –30 dBc IM3
Intermodulation Distortion
Symbol Min Typ
Gps
ηD
IMD
— 18
— 37
— –30
Max
—
—
—
Units
dB
%
dBc
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 A
VDS = 28 V, IDQ = 180 mA
VGS = 10 V, VDS = 0 V
Symbol Min Typ
V(BR)DSS
65
—
IDSS
——
RDS(on)
— 0.83
VGS 2.5 3.2
IGSS
——
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings at TCASE = 25°C unless otherwise indicated
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 10 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Data Sheet 2 2004-02-03
|
PDF 파일 내의 페이지 : 총 10 페이지
제조업체: Infineon Technologies AG
( infineon )
PTF180101S transistor
데이터시트 다운로드 :
[ PTF180101S.PDF ]
[ PTF180101S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
PTF180101
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz - Infineon Technologies AG
PTF180101S
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz - Infineon Technologies AG