PTB20134 반도체 회로 부품 판매점
30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
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 Ericsson |
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PTB 20134
30 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20134 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
50
VCC = 25 V
40 ICQ = 100 mA
f = 900 MHz
30
20
10
0
0 1 23 4
Input Power (Watts)
5
30 Watts, 860–900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
20134LOT CODE
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
8.0
80
0.45
–40 to +150
2.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
PTB 20134
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz)
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 100 mA,
f = 900 MHz, ∆f = 1 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA,
f = 900 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 8
ηC 50
IMD —
Ψ—
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13 80
12 70
Efficiency (%)
11 60
10 50
9 Gain (dB)
8
VCC = 25 V
ICQ = 100 mA
POUT = 30 W
40
30
7 20
850 860 870 880 890 900 910
Frequency (MHz)
e
Typ
30
70
5
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
Typ Max Units
9.5 —
——
dB
%
-30 — dBc
— 30:1
—
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [email protected]
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98
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제조업체: Ericsson
( ericsson )
PTB20134 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
PTB20134
30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20135
85 Watts/ 925-960 MHz Cellular Radio RF Power Transistor - Ericsson