QSB320 반도체 회로 부품 판매점
SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR
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 Fairchild Semiconductor |
QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
COLLECTOR
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
0.043 (1.1)
0.020 (0.5)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• Surface Mount PLCC-2 Package
• Wide Reception Angle, 120°
• High Sensitivity
• Phototransistor Output
• Matched Emitter: QEB421
SCHEMATIC
COLLECTOR
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-F
VCE
VEC
IC
PD
Rating
-55 to +100
-55 to +100
260 for 10 sec
35
5
15
165
Unit
°C
°C
°C
V
V
mA
mW
NOTES
1. Derate power dissipation linearly
2.2 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. D= 940 nm.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
TEST CONDITIONS
VCE = 25 V, Ee = 0
IC = 1 mA
IE = 100 µA
Ee = 0.1 mW/cm2(4), VCE = 5 V
Ee = 0.5 mW/cm2(4), IC = 0.05 mA
VCC = 5 V, RL = 100 1
IC = 1 mA
SYMBOL
DPS
DSR
0
ID
BVCEO
BVECO
IC (ON)
VCE (SAT)
tr
tf
MIN
—
400
—
—
30
5
16
—
—
—
TYP
MAX
UNITS
880 —
nm
— 1000 nm
120 — Deg.
— 200 nA
——
V
——
V
— — µA
— 0.3
V
8 — µs
8 — µs
2001 Fairchild Semiconductor Corporation
DS300386 2/26/01
1 OF 3
www.fairchildsemi.com
QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
Fig.1 Dark Current Vs. Ambient Temperature
103
Normalized to:
VCE=25V
TA=25oC
102
101
VCE=25V
VCE=10V
100
10-1
40 60 80
TA-Ambient Temperature ( oC)
100
Fig.3 Light Current Vs. Collector to Emitter Voltage
10
Ie=1mW/cm2
Ie=0.5mW/cm2
1
Ie=0.2mW/cm2
Ie=0.1mW/cm2
0.1
Normalized to:
0.01 VCE=5V
Ie=0.5mW/cm2
TA=25oC
0.001
0.1
1
VCE-Collector-emitter Voltage (V)
10
Fig.2 Dark Current Vs. Collector Emitter Voltage
10
1
0.1
0
10 20 30 40 50
VCE-Collector Emitter Voltage (V)
60
Fig4. Light Current Vs. Ambient Temperature
10
1
Normalized to:
VCE=5V
Ie=0.5mW/cm2
0.1 TA=25oC
-40 -20 0 20 40 60
TA-Ambient Temperature ( oC)
80 100
www.fairchildsemi.com
2 OF 3
2/26/01 DS300386
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QSB320 transistor
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관련 데이터시트
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SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR - Fairchild Semiconductor
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