PBSS4350 반도체 회로 부품 판매점
50 V low VCEsat NPN transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D302
PBSS4350D
NPN transistor
Product specification
2000 Mar 08
Philips Semiconductors
NPN transistor
Product specification
PBSS4350D
FEATURES
• High current capabilities
• Low VCEsat.
APPLICATIONS
• Heavy duty battery powered equipment (Automotive,
Telecom and Audio/Video) such as motor and lamp
drivers
• VCEsat critical applications such as the latest low supply
voltage IC applications
• All battery driven equipment to save battery power.
DESCRIPTION
NPN low VCEsat transistor in a SC-74 plastic package.
PNP complement: PBSS5350D.
MARKING CODE
TYPE NUMBER
PBSS4350D
MARKING CODE
43
PINNING
PIN
1
2
3
4
5
6
collector
collector
base
emitter
collector
collector
DESCRIPTION
handbook, halfpage 6
5
1
Top view
2
4
1, 2, 5, 6
3
3
MAM436
4
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
Tj
Tamb
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb = ≤ 25 °C
note 1
note 2
MIN.
−
−
−
−
−
−
MAX. UNIT
60 V
50 V
6V
3A
5A
1A
− 600 mW
− 750 mW
−65 +150 °C
− 150 °C
−65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
2000 Mar 08
2
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PBSS4350 transistor
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