TEMT1000 반도체 회로 부품 판매점
Silicon NPN Phototransistor
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 Vishay Telefunken |
Silicon NPN Phototransistor
Description
TEMT1000 is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in SMT package
with dome lens. Due to its integrated Daylight filter the
device is sensitive for IR radiation only.
High on axis sensitivity is provided by a viewing angle
of ± 15°.
Features
D Fast response times
D High photo sensitivity
D Angle of half sensitivity ϕ = ± 15°
D Daylight filter matched for near IR radiation
D SMD with terminals Z–bend
Applications
Detector in electronic control and drive circuits
IR Detector for Daylight application
TEMT1000
Vishay Telefunken
15 970
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Soldering Temperature
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s, 2 mm from case
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tamb
Tsd
Value
70
5
50
100
100
100
–40...+85
–40...+85
260
Unit
V
V
mA
mA
mW
°C
°C
°C
°C
Document Number 81554
Rev. 4, 17-Feb-00
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TEMT1000
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
Symbol
V(BR)CE
O
ICEO
CCEO
ϕ
ll0p.5
VCEsat
Min
70
Typ Max
1
3
±15
850
750...980
200
0.3
ton 2.0
toff 2.3
fc 180
Unit
V
nA
pF
deg
nm
nm
V
ms
ms
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
lCollector Light Current Ee=1mW/cm2,
=950nm, VCE=5V
Type
Symbol Min Typ Max Unit
TEMT1000
Ica 2.0 7.0
mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
103
VCE=20V
102
2.0
1.8
VCE=5V
l1.6 Ee=1mW/cm2
=950nm
1.4
1.2
101
100
20 40 60 80 100
94 8304
Tamb – Ambient Temperature ( °C )
Figure 1. Collector Dark Current vs.
Ambient Temperature
1.0
0.8
0.6
0
20
40 60
80 100
94 8239
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Collector Current vs.
Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 81554
Rev. 4, 17-Feb-00
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Vishay Telefunken
( vishay )
TEMT1000 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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