XN5601 반도체 회로 부품 판매점
Silicon PNP epitaxial planer transistor
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 Panasonic Semiconductor |
Composite Transistors
XN5601
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SB709A+2SD601A
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Tr1 Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2 Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
–60
–50
–7
–100
–200
60
50
7
100
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 4N
Internal Connection
Tr1
6
1
52
43
Tr2
1
Composite Transistors
s Electrical Characteristics (Ta=25˚C)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–60
–50
–7
160
XN5601
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
60
50
7
160
typ max Unit
V
V
V
0.1 µA
100 µA
460
0.1 0.3
V
150 MHz
3.5 pF
2
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제조업체: Panasonic Semiconductor
( panasonic )
XN5601 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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