XN4402 반도체 회로 부품 판매점
Silicon PNP epitaxial planer transistor
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 Panasonic Semiconductor |
Composite Transistors
XN4402
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SB710 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
–60
–50
–5
– 0.5
–1
300
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: OH
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
VCEO
VEBO
ICBO
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
–50 V
–5 V
– 0.1 µA
Forward current transfer ratio
hFE1
hFE2
VCE = –10V, IC = –150mA*
VCE = –10V, IC = –500mA*
85
40
340
Collector to emitter saturation voltage VCE(sat)
IC = –300mA, IB = –30mA*
– 0.35 – 0.6
V
Base to emitter saturation voltage VBE(sat)
IC = –300mA, IB = –30mA*
–1.1 –1.5
V
Transition frequency
fT VCB = –10V, IE = 50mA, f = 200MHz 200 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
6 15 pF
*Pulse measurement
1
Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
– 800
–700
– 600
– 500
– 400
– 300
– 200
IC — VCE
Ta=25˚C
IB= –10mA
– 9mA
– 8mA
–7mA
– 6mA
– 5mA
– 4mA
– 3mA
– 2mA
–1mA
–100
0
0 –4 –8 –12 –16 –20
Collector to emitter voltage VCE (V)
XN4402
– 800
–700
IC — IB
VCE= –10V
Ta=25˚C
– 600
– 500
– 400
– 300
– 200
–100
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 0.03
– 0.01
– 25˚C
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
–100
– 30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta= – 25˚C
25˚C
75˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
300
VCE= –10V
250
200 Ta=75˚C
25˚C
150
– 25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
240
VCB=–10V
Ta=25˚C
200
160
120
80
40
0
1 2 3 5 10 20 30 50 100
Emitter current IE (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Collector to base voltage VCB (V)
–120
–100
VCER — RBE
IC= – 2mA
Ta=25˚C
– 80
– 60
– 40
– 20
0
1 3 10 30 100 300 1000
Base to emitter resistance RBE (kΩ)
2
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( panasonic )
XN4402 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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