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AUK corp |
Semiconductor
Descriptions
• High voltage application
• Telephone application
Features
• Collector-Emitter voltage
VCEO=SBT42F : 300V
• Complementary pair with SBT92F
Ordering Information
Type NO.
SBT42F
Outline Dimensions
Marking
M1A
2.4±0.1
1.6±0.1
1
3
2
SBT42F
NPN Silicon Transistor
Package Code
SOT-23F
unit : mm
KST-2077-000
PIN Connections
1. Base
2. Emitter
3. Collector
1
SBT42F
Absolute maximum ratings
Characteristic
Symbol
Ratings
(Ta=25°C)
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter Current
Collector dissipation
Junction temperature
Storage temperature
* : Package Mounted on 99.5% Alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
IE
PC*
Tj
Tstg
300
300
6
500
-500
350
150
-55~150
Test Condition
Min.
Typ.
V
V
V
mA
mA
mW
°C
°C
(Ta=25°C)
Max. Unit
Collector-Base breakdown voltage
BVCBO IC=100µA, IE=0
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=200V, IE=0
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
IEBO
hFE*
VCE(sat)*
VBE(sat)*
VEB=6V, IC=0
VCE=10V, IC=30mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
Transition frequency
fT VCE=20V, IC=10mA
Collector output capacitance
Cob VCB=20V, IE=0, f=1MHz
* : Pulse Tester: Pulse Width ≤ 300 ㎲, Duty Cycle≤ 2.0%
300 -
300 -
6-
--
--
40 -
--
--
50 -
--
-V
-V
-V
0.1 µA
0.1 µA
--
0.5 V
0.9 V
- MHz
3 pF
KST-2077-000
2
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