KTC3072D 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO)
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SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width 100mS, Duty Cycle 30%
RATING
40
20
7
5
8
1.0
150
-55 150
UNIT
V
V
V
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0+_ 0.2
P
D 1.10+_ 0.2
E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2
J 0.5+_ 0.1
L K 2.0+_ 0.2
L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)(Note1)
hFE(2)
VCE(sat)
fT
IC=100 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCB=20V, IE=0
VEB=7V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=3A, IB=60mA(Pulse)
VCE=6V, IC=50mA
Collector Output Capacitance
Cob VCB=20V, f=1MHz, IE=0
Note 1 : hFE(1) Classification O:120 240, Y:200 400, GR:350 700
2003. 3. 27
Revision No : 3
IPAK
MIN.
40
20
7
-
-
120
100
-
20
-
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
1/3
KTC3072D/L
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Pc - Ta
Ta=25 C
20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
IC - VCE
3.4
Ta=25 C
3.2
7mA
2.8
6mA
2.4 5mA
2.0 4mA
1.6 3mA
1.2 2mA
0.8
I B =1mA
0.4
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VBE
8
7 VCE =10V
Ta=25 C
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
1.2
800
700
600
500
400
300
200
100
0
0.01
hFE - IC
VCE =2V
Ta=25 C
0.03 0.1 0.3
1
3
COLLECTOR CURRENT I C (A)
10
2003. 3. 27
Revision No : 3
I C - VCE(sat)
8
7 I C/IB =30
Ta=25 C
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
f T - IE
400
VCE =6V
Ta=25 C
300
200
100
0
0.01
0.03 0.1 0.3
1
3
EMITTER CURRENT IE (A)
10
2/3
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KTC3072D transistor
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