KTC2025D 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP/ MEDIUM SPEED SWITCHING)
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SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
Complementary to KTA1045D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
ICP
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Storage Temperature Range
Tj
Tstg
RATING
120
120
5
1
2
1.0
8
150
-55 150
UNIT
V
V
V
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30 +_ 0.1
1.00 MAX
2.30 +_ 0.2
0.5 +_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2
E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2
J 0.5 +_ 0.1
L K 2.0 +_ 0.2
L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1) Note
hFE(2)
fT
Cob
VCE(sat)
VBE(sat)
Turn-on Time
ton
Switching Time
Turn-off Time
toff
TEST CONDITION
VCB=50V, IE=0
VEB=4V, IC=0
IC=10 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCE=5V, IC=50mA
VCE=5V, IC=500mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
IC=500mA, IB=50mA
IC=500mA, IB=50mA
I B1
IB2
1 1Ω
20u sec 100Ω
24Ω
1uF 1uF
Storage Time
tstg
(Note) : hFE(1) Classification Y:100 200, GR:160 320
-2V 12V
VCE =12V
IC =10I B1 =-10IB2 =500mA
IPAK
MIN.
-
-
120
120
5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
130
20
0.15
0.85
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
UNIT
A
A
V
V
V
MHz
pF
V
V
- 100 -
- 500 -
nS
- 700 -
2003. 3. 27
Revision No : 3
1/2
KTC2025D/L
I C - VCE
1.6
Tc=25 C
1.4
1.2
1.0
20
15
12
10
0.8 8
6
0.6 4
0.4
0.2
0
0
1
2
IB =0mA
23 4 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
6
1.4
VCE =5V
1.2
VBE - I C
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
Cob - VCB
200
f=1MHz
100
1.2
50
30
10
5
0.05 1
3 10
30
COLLECTOR-BASE VOLTAGE VCE (V)
500
VCE =5V
300
hFE - IC
100
100
50
30
10
1
3 10 30 100 300 1k
COLLECTOR CURRENT I C (mA)
5k
2003. 3. 27
Revision No : 3
1.0 IC/IB=10
0.5
0.3
VCE(sat) - I C
0.1
0.05
0.03
0.01
1
3 10 30 100 300 1k
COLLECTOR CURRENT I C (mA)
3k
10
81
Pc - Ta
1 Tc=25 C
2 Ta=25 C
6
4
2
2
0
0 20 40 60 80 100 120 140 160
AMBIENT TMMPERATURE Ta ( C)
SAFE OPERATING AREA
5
3 IC MAX.(PULSED)*
1
0.5
0.3
IC MAX. (CONTINUODUTCSc=O)2P5ERCATI1O0Nm1Sm1*S0*0µS*
0.1
0.05 * SINGLE NONREPETITIVE
0.03 PULSE Tc=25 C
CURVES MUST BE DERATED
0.01
LINEARLY WITH INCREASE
IN TEMPERATURE
0.005
1 10
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
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KTC2025D transistor
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