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Toshiba Semiconductor |
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5466
Dynamic Focus Applications
High Voltage Switching Applications
High Voltage Amplifier Applications
2SC5466
Unit: mm
• High voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
800
800
5
50
25
2.0
10
150
−55 to 150
V
V
V
mA
mA
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
Test Condition
VCB = 640 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 7 mA
IC = 20 mA, IB = 4 mA
IC = 20 mA, IB = 4 mA
VCE = 10 V, IC = 3 mA
VCB = 100 V, f = 1 MHz
Marking
2SC5466
Min Typ. Max Unit
― ― 1.0 μA
― ― 10 μA
15 ― ―
― ― 1.0 V
― ― 1.5 V
― 5.5 ― MHz
― 2.2 ― pF
C5466
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
http://store.iiic.cc/
2006-11-10
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