ASIMRF427 반도체 회로 부품 판매점
NPN SILICON RF POWER TRANSISTOR
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 Advanced Semiconductor |
MRF427
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF427 is Designed for
high voltage applications up to 30 MHz
FEATURES:
• PG = 18 dB min. at 25 W/30 MHz
• IMD3 = -34 dBc max. at 25 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 6.0 A
VCBO
110 V
VCEO
65 V
VEBO
4.0 V
PDISS
TJ
TSTG
80 W @ TC = 25 °C
-65 OC to +200 °C
-65 OC to +150 °C
θJC 2.19 °C/W
PACKAGE STYLE .500 4L FLG
FULL R
A
E
.112x45°
L
C
C
BB
E
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10467
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCES
IC = 100 mA
BVCEO
IC = 200 mA
BVEBO
IE = 10 mA
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
110
110
65
4.0
15 90
UNITS
V
V
V
V
---
Cob VCB = 50 V
f = 1.0 MHz
60 pF
GP
18 20
dB
IMD3
VCE = 50 V
POUT = 25 W (PEP) f = 30 MHz
- 37 -34 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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PDF 파일 내의 페이지 : 총 1 페이지
제조업체: Advanced Semiconductor
( advanced )
ASIMRF427 transistor
데이터시트 다운로드 :
[ ASIMRF427.PDF ]
[ ASIMRF427 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
