CSC1008 반도체 회로 부품 판매점
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS
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 ETC |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
80
60
8.0
700
800
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION CSC1008
Collector -Base Voltage
VCBO IC=100uA.IE=0
>80
Collector -Emitter Voltage
VCEO
IC=10mA,IB=0
>60
Emitter-Base Voltage
VEBO
IE=100uA, IC=0
>8.0
Collector-Cut off Current
ICBO
VCB=60V, IE=0
<100
Emitter-Cut off Current
IEBO
VEB=5V, IC=0
<100
DC Current Gain
hFE*
IC=50mA,VCE=2V
40-400
Collector Emitter Saturation Voltage VCE(Sat)* IC=500mA,IB=50mA <0.4
Base Emitter Saturation Voltage
VBE(Sat) * IC=500mA,IB=50mA <1.1
CSA708
>80
>60
>8.0
<100
<100
40-240
<0.7
<1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
ft
IC=50mA, VCE=10V
>30
typ50
Out-Put Capacitance
Cob VCB=10V, IE=0
typ8 typ13
f=1MHz
UNIT
V
V
V
mA
mW
deg C
UNIT
V
V
V
nA
nA
V
V
MHz
pF
*hFE CLASSIFICATION CSC1008 R : 40 - 80
CSA708 R : 40 - 80
*Pulse Test: PW=350us, Duty Cycle=2%
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G : 200-400
Continental Device India Limited
Data Sheet
Page 1 of 3
TO-92 Plastic Package
B TO-92 Transistors on Tape and Ammo Pack
321
D AA
G
D
SEC AA
21
3
FF
321
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
DIM MIN. MAX.
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5 DEG
G 1.14 1.40
H 1.14 1.53
K 12.70
—
M EC H AN IC AL D ATA
T
hh
A
P
A1
(p)
Ammo Pack Style
Ad hesive Tape on To p Sid e
FLAT SIDE
LABEL
FEED
C arrier
Strip
8.2"
H1
H0
L
W2
Wo W1
W
t1
t
F1
F
P2
F2
Do
1.77"
Po
All dimensions in mm unless specified otherwise
13"
Flat S ide of Transistor and
Ad hesive Tape Visib le
2000 pcs./A m mo P ack
ITEM
BODY WIDTH
BODY HEIGHT
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
SYMBOL
A1
A
T
P
Po
FEED HOLE CENTRE TO
COMPONENT CENTRE
DISTANCE BETW EEN OUTER
LEADS
COMPONENT ALIGNMENT
TAPE W IDTH
HOLD-DOW N TAPE W IDTH
HOLE POSITION
P2
F
h
W
Wo
W1
HO LD-DO W N TAPE POSIT IO N
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TO TAL TAPE THIC KNESS
LEAD - TO - LEAD DISTANCEF 1,
CLINCH HEIGHT
PULL - OUT FORCE
W2
Ho
H1
L
Do
t
F2
H2
(P)
S P EC IFIC ATIO N
MIN. NOM. MAX.
4.0
4.8
3.9
12.7
12.7
4.8
5.2
4.2
TOL .
±1
± 0.3
6.35 ± 0.4
+0.6
5.08 -0.2
01
18 ± 0.5
6 ± 0.2
9 +0.7
-0.5
0.5 ± 0.2
16 ± 0.5
23.25
11.0
4 ± 0.2
1.2
2.54 +0.4
-0.1
3
6N
REMARKS
CUMULATIVE PITCH
ERROR 1.0 mm/20
PITCH
TO BE MEASURED AT
BOTTOM OF CLINCH
AT TOP OF BODY
t1 0.3 - 0.6
NOTES
1. M AX IM UM A LIGN M EN T D EV IAT ION BE TW E EN LEAD S N O T TO BE G R EATER TH AN 0.2 m m .
2. M AX IM UM N O N-C U M ULATIVE VAR IATIO N B ETW E EN TA PE FEE D H OLE S S HA LL NO T E XC EED 1 m m IN 20
P IT C H E S .
3. HOLDDOW N TAPE NOT TO EXCEED BEYOND THE EDGE(S) OF CARRIER TAPE AND THERE SHALL BE NO
EXPOSURE OF ADHESIVE.
4. N O M O R E TH AN 3 CO N SE CU TIVE M ISS IN G CO M P ON EN TS ARE PE RM ITT ED .
5. A TAP E TR AILE R, H AVIN G AT LE AS T TH RE E FE ED HO LES AR E R EQ UIR ED AF TER THE LAS T CO M PO N EN T.
6. SPLICES SHALL NOT INTERFERE W ITH THE SPROCKET FEED HOLES.
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-92 Bulk
TO-92 T&A
1K/polybag
200 gm/1K pcs
2K/ammo box 645 gm/2K pcs
INNER CARTON BOX
Size Qty
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
5.0K
2.0K
OUTER CARTON BOX
Size Qty Gr Wt
17" x 15" x 13.5"
17" x 15" x 13.5"
80.0K 23 kgs
32.0K 12.5 kgs
Continental Device India Limited
Data Sheet
Page 2 of 3
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( etc )
CSC1008 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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