BC877 반도체 회로 부품 판매점
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage
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 Siemens Semiconductor Group |
NPN Silicon Darlington Transistors
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BC 876, BC 878
BC 880 (PNP)
BC 875
… BC 879
2
3
1
Type
Marking
BC 875
BC 877
BC 879
–
Maximum Ratings
Ordering Code
C62702-C853
C62702-C854
C62702-C855
Pin Configuration
123
ECB
Package1)
TO-92
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 90 ˚C2)
Junction temperature
Storage temperature range
Symbol
BC 875
VCE0
45
VCB0
60
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 877 BC 879
60 80
80 100
5
1
2
100
200
0.8 (1)
150
– 65 … + 150
Unit
V
A
mA
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - case3)
Rth JA
Rth JC
≤ 156
≤ 75
K/W
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
383 5.91
BC 875
… BC 879
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 50 mA
BC 875
BC 877
BC 879
Collector-base breakdown voltage
IC = 100 µA
BC 875
BC 877
BC 879
Emitter-base breakdown voltage, IE = 100 µA
Collector cutoff current
VCE = 0.5 × VCEmax
Collector cutoff current
VCB = VCBmax
VCB = VCBmax, TA = 150 ˚C
Emitter cutoff current, VEB = 4 V
DC current gain
IC = 150 mA; VCE = 10 V1)
IC = 500 mA; VCE = 10 V1)
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
Base-emitter saturation voltage1)
IC = 1 A; IB = 1 mA
AC characteristics
Transition frequency
IC = 200 mA, VCE = 5 V, f = 20 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V(BR)CB0
45
60
80
V(BR)EB0
ICE0
60
80
100
5
–
–
–
–
–
–
–
–
–
ICB0
IEB0
hFE
VCEsat
VBEsat
––
––
––
1000 –
2000 –
––
––
––
V
–
–
–
–
–
–
–
500 nA
100 nA
20 µA
100 nA
–
–
–
V
1.3
1.8
2.2
fT – 150 – MHz
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Siemens Aktiengesellschaft
384
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( siemens )
BC877 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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